? semiconductor components industries, llc, 2008 november, 2008 ? rev. 1 1 publication order number: ns6a13a/d NS6A13AT3G 600 watt peak power zener transient voltage suppressor unidirectional the NS6A13AT3G is designed to protect voltage sensitive components from high voltage, high energy transients. this device has excellent clamping capability, high surge capability, low zener impedance and fast response time. the NS6A13AT3G is ideally suited for use in computer hard disk drives, communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies, and many other industrial/ consumer applications. specification features: ? peak reverse working voltage of 13 v ? peak pulse power of 600 w (10 x 1000 sec) ? esd rating of class 3 (>16 kv) per human body model ? esd rating of class 4 (>8 kv) iec 61000 ? 4 ? 2 ? fast response time ? low profile package ? this is a pb ? free device mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds leads: modified l ? bend providing more contact area to bond pads polarity: cathode indicated by polarity band mounting position: any plastic surface mount zener overvoltage transient suppressor device package shipping ? ordering information sma case 403d plastic cathode anode marking diagram http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. NS6A13AT3G sma (pb ? free) 5000/tape & reel 6lg = specific device code a = assembly location y = year ww = work week = pb ? free package 6lg ayww
uni ? directional tvs i pp i f v i i r i t v rwm v c v br v f NS6A13AT3G http://onsemi.com 2 maximum ratings rating symbol value unit peak power dissipation (note 1) @ t l = 25 c, pulse width = 1 ms p pk 600 w dc power dissipation @ t l = 75 c measured zero lead length (note 2) derate above 75 c thermal resistance from junction to lead p d r jl 1.5 20 50 w mw/ c c/w dc power dissipation (note 3) @ t a = 25 c derate above 25 c thermal resistance from junction to ambient p d r ja 0.5 4.0 250 w mw/ c c/w forward surge current (note 4) @ t a = 25 c i fsm 40 a operating and storage temperature range t j , t stg ? 65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. 10 x 1000 s, non ? repetitive. 2. 1 square copper pad, fr ? 4 board 3. fr ? 4 board, using on semiconductor minimum recommended footprint, as shown in 403d case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 5) = 30 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f 5. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, non ? repetitive duty cycle. electrical characteristics device device marking v rwm (note 6) i r @ v rwm breakdown voltage v c @ i pp (note 8) c typ (note 9) v br (note 7) volts @ i t v c i pp v a min nom max ma v a pf NS6A13AT3G 6lg 13 5.0 14.4 15.15 15.9 1.0 21.5 27.9 1160 6. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 7. v br measured at pulse test current i t at an ambient temperature of 25 c. 8. surge current waveform per figure 1. 9. bias voltage = 0 v, f = 1 mhz, t j = 25 c.
NS6A13AT3G http://onsemi.com 3 v in v l z in load 01 2 34 0 50 100 t, time (ms) value (%) half value - i pp 2 peak value - i pp t r 10 s figure 1. 10 1000 s pulse waveform figure 2. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . figure 3. typical protection circuit
NS6A13AT3G http://onsemi.com 4 package dimensions sma case 403d ? 02 issue f 4.0 0.157 2.0 0.0787 2.0 0.0787 mm inches scale 8:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max min millimeters 1.97 2.10 2.20 0.078 inches a1 0.05 0.10 0.15 0.002 b 1.27 1.45 1.63 0.050 c 0.15 0.28 0.41 0.006 d 2.29 2.60 2.92 0.090 e 4.06 4.32 4.57 0.160 l 0.76 1.14 1.52 0.030 0.083 0.087 0.004 0.006 0.057 0.064 0.011 0.016 0.103 0.115 0.170 0.180 0.045 0.060 nom max 4.83 5.21 5.59 0.190 0.205 0.220 h e e bd l c a a1 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 403d ? 01 obsolete, new standard is 403d ? 02. polarity indicator optional as needed (see styles) h e on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 ns6a13a/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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